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Design Notes
Frequency and Temperature Dependent Devices in VSS
This example demonstrates performance of a device with varying frequency and temperature. This is accomplished by setting a range of frequencies for analysis in the Options/Default System Options..., under the RF Frequencies tab, and sweeping the environment variable for temperature, _TAMB. The Gain, P1dB, IP3, and NF in the AMP_B2 model are defined for a range of frequencies and temperatures. The graphs in this project show the gain, third order intermodulation product, and noise figure over the RF link.
Simulation Details
The simulated frequencies are defined in the Options/Default System Options..., under the RF Frequencies tab. The block SWPVAR is used to sweep the variable _TAMB. For each combination of frequency and temperature, the simulation selects the gain, P1dB, IP3, and NF of the device. Looking at the parameters for AMP_B2, we see that for frequency 1 GHz, the gain at 100K is 10 dB, 14 dB at 230K, and 21 dB at 290K.
Graphs
The Gain and NF graphs plot the cumulative gain and cumulative noise figure of the RF link, respectively. They each contain 9 traces, each of them corresponding to each combination of frequency and temperature selection. The IP3 graph shows the power of the third order intermodulation products as a function of frequency and temperature.
For a detailed description of how to configure AMP_B2, please refer to section 2.6.3 of VSS Modeling Guide.
You may also consider using the block AMP_F to model frequency-dependent devices.